產(chǎn)品分類
提拉法單晶生長設(shè)備
所屬分類：
化合物晶體設(shè)備
提拉法單晶生長設(shè)備
概要：
適用領(lǐng)域：單晶生長、EFG、LPE Application Fields: Single Crystal Growth, Edge-defined Film-fed Growth (EFG), Liquid Phase Epitaxy (LPE) 適用材料: ?SiC、Ga2O3、YAG、LYSO、LT/LN、GGG、YAP等晶體 Suitable for Processing: SiC (Silicon Carbide), Ga2O3 (Gallium Oxide), YAG (Yttrium Aluminum Garnet), LYSO (Lutetium Yttrium Orthosilicate), LT/LN (Lithium Tantalate / Lithium Niobate), GGG (Gadolinium Gallium Garnet), YAP (Yttrium Aluminum Perovskite) and other crystals 晶圓尺寸: ?12/8/6/4英寸 Wafer Size: 12/8/6/4 inch
關(guān)鍵詞：
液相法長晶爐
提拉法單晶生長設(shè)備
產(chǎn)品應(yīng)用/Product Applications：
適用領(lǐng)域：單晶生長、EFG、LPE Application Fields: Single Crystal Growth, Edge-defined Film-fed Growth (EFG), Liquid Phase Epitaxy (LPE)
適用材料: SiC、Ga2O3、YAG、LYSO、LT/LN、GGG、YAP等晶體
Suitable for Processing: SiC (Silicon Carbide), Ga2O3 (Gallium Oxide), YAG (Yttrium Aluminum Garnet), LYSO (Lutetium Yttrium Orthosilicate), LT/LN (Lithium Tantalate / Lithium Niobate), GGG (Gadolinium Gallium Garnet), YAP (Yttrium Aluminum Perovskite) and other crystals
晶圓尺寸: 12/8/6/4英寸 Wafer Size: 12/8/6/4 inch
技術(shù)指標(biāo) /Technical Parameters：
加熱溫度：2400℃ Heating Temperature: 2400℃
加熱方式：感應(yīng) Heating Method:Induction
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