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產品應用/Product Applications： ?適用領域：單晶生長 Relevant Industries:Single Crystal Growth ?適用材料：Ga2O3、GaAs等 Suitable for Processing: Ga2O3 (Gallium Oxide),GaAS(Gallium Arsenide), etc. ?晶圓尺寸：12/8/6英寸 Wafer Size: 12/8/6 inch 技術指標/Technical Indicators： ?制程溫度范圍：2200°C Process Temperature Range：2200°C ?加熱方式：感應/電阻 Heating Method:Induction/Resistance

導模爐

產品應用/Product Applications： ?適用領域：單晶生長、EFG、LPE Relevant Industries:Single Crystal Growth, Edge-defined Film-fed Growth (EFG) Liquid Phase Epitaxy (LPE) ?適用材料：SiC、Ga2O3、YAG、LYSO、LT/LN、GGG、YAP等晶體 Suitable for Processing: SiC (Silicon Carbide), Ga2O3 (Gallium Oxide), YAG (Yttrium Aluminum Garnet), LYSO (Lutetium Yttrium Orthosilicate), LT/LN (Lithium Tantalate / Lithium Niobate), GGG (Gadolinium Gallium Garnet), ?YAP (Yttrium Aluminum Perovskite) and other crystals ?晶圓尺寸：12/8/6/4英寸 Wafer Size: 12/8/6/4 inch

立式丨氧化/擴散/退火/LPCVD/ALD設備

?適用領域：集成電路、先進封裝 Relevant Industries: Integrated Circuits, Advanced Packaging ?適用材料：Si Suitable for Processing: Silicon (Si) ?晶圓尺寸：12/8 英寸 Wafer Size: 12/8 inch ?適用工藝：氮化硅(SiN)、二氧化硅(SiO2)等膜層的沉積 Silicon Nitride (SiN)、 Silicon Dioxide（SiO2）, and other film layers

臥式丨氧化/擴散/退火/LPCVD設備

? 適用領域：集成電路、先進封裝、化合物半導體 Relevant Industries: Integrated Circuits, Advanced Packaging, Compound Semiconductors ? 適用材料: ?Si、SiC、GaN Suitable for Processing: Silicon (Si), Silicon Carbide (SiC), Gallium Nitride (GaN) ? 晶圓尺寸：12/8 英寸 Wafer Size: 12/8 inch ? 適用工藝：氧化(Oxidation)、退火(Annealing)、固化(Polyimide)、合金(Alloy)、擴散(Diffusion) Applicable Processes: Oxidation, Annealing, Polyimide Curing, Alloy, Diffusion

HVPE 法單晶生長設備 —臥式

適用領域：單晶生長、外延生長 Relevant Industries: Single Crystal Growth, Epitaxial Growth 適用材料: ?GaN（單晶）、AIN（單晶/外延）、Ga2O3（外延） Suitable for Processing: GaN (single crystal),AlN (single crystal / epitaxial)Ga2O3 (epitaxial) 晶圓尺寸:? 8/6 英寸 Wafer Size: 8/6? inch

HVPE 法單晶生長設備 —立式

適用領域：單晶生長、外延生長 Relevant Industries: Single Crystal Growth, Epitaxial Growth 適用材料: ?GaN（單晶）、AIN（單晶/外延）、Ga2O3（外延） Suitable for Processing: GaN (single crystal),AlN (single crystal / epitaxial)Ga2O3 (epitaxial) 晶圓尺寸:8/6 英寸 Wafer Size: 8/6 inch

PVT法長晶爐

適用領域：單晶生長 Relevant Industries: ?Single Crystal Growth 適用材料: ?SiC、AIN Suitable for Processing: ?SiC (Silicon Carbide), AlN (Aluminum Nitride) 晶圓尺寸: ?12/8 英寸 Wafer Size: 12/8 inch